Touch sensor mechanism and manufacturing method thereof

ABSTRACT

A touch sensor mechanism for a touch display device, includes a cover lens made by a transparent material having a dielectric constant greater than 4.5 and a compression strength greater than 700 MPa for generating a finger&#39;s touching capacitance (C F ) while a user&#39;s finger of a user touch thereon; and a sensor device module including a plurality of sensor devices having a sensor parasitic capacitance (C P ). The cover lens and the sensor device module are disposed in the touch display device in such a manner that a ratio of a standard deviation value (σ U ) of the finger&#39;s touching capacitance (C F ) of the cover lens to the sensor parasitic capacitance (C P ) of the sensor device module is a signal-to-noise ratio (SNR). The SNR is adjusted along with the finger&#39;s touching capacitance (C F ) by reducing the thickness of the cover lens.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application claims the priority of Taiwanese patent application No.101146179, filed on Dec. 7, 2012, which is incorporated herewith byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a touch sensor mechanism andthe manufacturing method thereof, more specifically to a touch sensormechanism and the manufacturing method thereof applied in a touchdisplay device, in which, a transparent material with higher dielectricconstant and mechanic strength is implemented as a cover lens fortouching thereon. The thickness of the cover lens can be reduced inorder to enhance the signal-to-noise ratio (SNR).

2. The Prior Arts

Well-known technology of capacitive touch device using touch sensorsalready applied in touch electronic devices/products for years. Ingeneral, a solution in transitional capacitive touch sensors is using acover lens with thickness less than 3 mm. In the other words, the touchsignal sensing is difficult or distorted due to the thick glass and itwill result the judgment mistakes of the touch electronicdevices/products. Therefore, reducing the thickness of cover lens isnecessary, however, reducing the thickness of cover lens also reduce themechanic strength of the touch electronic devices/products.

In general, capacitance is calculated by the formula C=(∈_(r)∈₀*A)/d,wherein ∈_(r) is dielectric constant, ∈₀ is free space permittivity, Ais area of finger and sensor pad overlap, and d is distance betweenconducting materials. Therefore, the higher of dielectric constant ofthe cover lens, the higher of finger's touching capacitance C_(F). Asthe calculation of formula, the lower of the thickness of the coverlens, the higher of finger's touching capacitance C_(F); and the lowerof thickness, the higher mechanic strength of material is requested. Inthe view point of crosstalk noise from a sensor device to another sensordevice, the lower thickness is better for reducing the transmittingdistance, the higher dielectric constant of cover lens, the longerdistance between the sensor devices, and the lower current of drivingcircuit are better for preventing the interaction from theelectromagnetic field.

In the touch display device, the signal-to-noise ratio (SNR) is measuredaccording to the count value at the output terminal of sensors. Forexample, when the finger does not touch the sensors, the unpressedaverage value is μ_(U), and unpressed standard deviation value is σ_(U);when the finger touches the sensors, the pressed average value is μ_(P),and pressed standard deviation value is σ_(P), in general, thesignal-to-noise ratio (SNR) is (μ_(U)−μ_(P))/σ_(U). According to thetouch sensing theory, C_(Total)=C_(F+)C_(P), wherein, C_(Total) is thetotal capacitance and C_(P) is a sensor parasitic capacitance which isthe capacitance of sensor device itself, and C_(F) is capacitancegenerated by the finger touching, also called finger's touchingcapacitance. Signal-to-noise ratio (SNR) is related to the ratio of(C_(Total)−C_(P))/C_(P), that is (C_(F)/C_(P)), and signal-to-noiseratio (SNR) is better in a suitable value, such that the sensitivitywill not too high or too low. Therefore, the higher tolerance ofcrosstalk noise is requested in design specification, the finger'stouching capacitance C_(F) related to signal-to-noise ratio (SNR) shouldbe higher.

Recently, because Apple Inc. uses projection-typed capacitive touchdevice in their products, such that projection-typed capacitive touchdevice becomes popular due to advantages of simple structure, highreliability, long lifetime, acceptable sensitivity, acceptableprecision, acceptable light transmittance, and multi-touch implement.

However, this touch sensor technology is not perfect, for example, thecapacitance of this touch sensor technology is easily influenced by theelectromagnetic field effect of circuit so at to the effective size oftouch panel used this technology is limited to a mid-small size which isequal to or smaller than 17 inches. Larger size (17˜30 inches) of thetouch panel used this technology is only in the experiment or teststeps, and commercialized, and the companies are developing andimproving for increasing the apply range of projection-typed capacitivetouch technology.

Furthermore, the touch sensor technology is developing from one glasssolution/touch on lens (OGS/TOL) to on-cell, on-cell/in-cell hybrid andin-cell, and it will increase the distance between sensor and coverlens, and would cause the assembly/attaching gap such that the finger'stouching capacitance C_(F) is decreased and the touch sensitivity isreduced. Moreover, the larger size and the higher density of sensor willcause the much serious influence by the electromagnetic effect.

Therefore, it is requested to develop a touch sensor technology appliedin a touch display device, which can eliminate the problems such asreducing the thickness of the cover lens (for example, the thicknesslower than 1 mm) without affecting the mechanic strength of touchelectronic devices/products due to the higher mechanic strength (forexample, the compressive strength higher than 700 MPa) of cover lens;and reducing the thickness of the cover lens which can increase thefinger's touching capacitance C_(F) and the signal-to-noise ratio (SNR)related to the ratio C_(F)/C_(P) for real application in order toeliminate the problem of reducing touch sensitivity by using the coverlens with higher dielectric constant (for example, the dielectricconstant higher than 4.5), such that the tolerance of noise caused bycrosstalk can be improved by increasing the finger's touchingcapacitance C_(F) and serious electromagnetic affect due to thelarge-sized of touch panel of touch display device can be alsoeliminated.

SUMMARY OF THE INVENTION

An objective of the present invention is to provide a touch sensormechanism and the manufacturing method thereof applied in a touchdisplay device, which uses a transparent material with high higher(>4.5) dielectric constant and high (>700 MPa) mechanic strength as acover lens which can reduce the thickness. The higher dielectricconstant, finger's touching capacitance (C_(F)) which thesignal-to-noise ratio (SNR) can be adjusted to a suitable value toprevent the sensitivity too high or too low, and the problem ofsensitivity could be solved.

Another objective of the present invention is to provide a touch sensormechanism and the manufacturing method thereof applied in a touchdisplay device. Since the finger's touching capacitance (C_(F)) can begreatly improved, so that the signal-to-noise ratio (SNR) is alsoimproved. The tolerance of noise caused by crosstalk between sensor tosensor could be increased and serious electromagnetic interaction due tothe large-sized of touch panel of touch display device can be alsosolved, and/or it provides more tolerance in circuit design.

According the objectives above, the touch sensor mechanism of thepresent invention includes a cover lens and a sensor device module, andthe touch sensor mechanism is applied in a touch display device, such asout-cell LCD touch display device, in-cell LCD touch display device,on-cell LCD touch display device, in-cell/on-cell hybrid LCD touchdisplay device, out-cell OLED touch display device, on-cell OLED touchdisplay device, and in-cell OLED touch display device.

Regarding the cover lens, the cover lens is a transparent material witha high dielectric constant (>4.5) and high mechanic strength (>700 MPa)for touch. The finger's touching capacitance (C_(F)) is greatly improvedby reducing the thickness and increasing dielectric constant, such thatthe signal-to-noise ratio (SNR) can also be improved. Thesignal-to-noise ratio (SNR) can be adjusted to a suitable value toprevent the sensitivity too high or too low, and the tolerance ofcrosstalk noise between sensor to sensor can be improved and seriouselectromagnetic affect due to the large-sized of touch panel of touchdisplay device can be also eliminated, and/or it provides more tolerancein circuit design.

Herein, sapphire (Al₂O₃) in varied axis (such as a-axis, c-axis, m-axis,and r-axis) is selected as the material of cover lens. The compressionstrength in each axis of sapphire is higher than 2000 MPa, and thedielectric constant (∈_(r)) is 11.5 in a-axis, 9.3 in c-axis and 11.5 inm-axis. Since sapphire in varied axis can be applied, and sapphire canbe a single crystal in one of a-axis, c-axis, m-axis, and r-axis,wherein the crystal direction in c-axis is (0001); crystal direction ina-axis includes (1 210), (11 20), (2 1 10), ( 1120), ( 2110) and (1210); crystal direction in m-axis includes ( 1010), ( 1100), (01 10),(10 10), (1 100), and (0 110); and crystal direction in r-axis includes(10 11), ( 101 1), (01 1 1), (0 111), (1 10 1) and ( 1101). The materialof cover lens also a aluminum oxynitride glass(Al_((64+x)/3)O_((32−x))N_(x), 2.75≦x≦5) with compression strengthhigher than 2677 MPa and the dielectric constant (∈_(r)) 9.19. Thematerial is selected according to the real condition.

In the touch display device, the signal-to-noise ratio (SNR) is measuredaccording to the count value at the output terminal of sensors. Forexample, when the finger does not touch the sensors, the unpressedaverage value is μ_(U), and unpressed standard deviation value is μ_(U);when the finger touches the sensor, the pressed average value is μ_(P),and pressed standard deviation value is μ_(P), in general, thesignal-to-noise ratio (SNR) is (μU−μP)/σ_(U).

Reducing the thickness of cover lens and increasing the dielectricconstant of cover lens, the finger's touching capacitance (C_(F)) can begreatly increased to increase the ratio of (C_(Total)−C_(P))/C_(P), thatis (C_(F)/C_(P)), such that the signal-to-noise ratio (SNR) can beadjusted to satisfy the real-applied request, whereinC_(Total)=C_(F+)C_(P), C_(F) is finger's touching capacitance, and C_(P)is the sensor parasitic capacitance of sensor device. Take well-knownout-cell touch device which has a cover lens with a thickness of 0.7 mmand a dielectric constant 4.5 as an example, if the cover lens ischanged by a c-axis sapphire glass, the thickness could be reduced to0.245 mm under touch in same compression strength, and the finger'stouching capacitance C_(F) becomes 5.9 times, and if the cover lens ischanged by a a-axis or m-axis sapphire glass, the thickness could bereduced to 0.245 mm under touch in same compression strength, and thefinger's touching capacitance C_(F) becomes 7.3 times, moreover, if thecover lens is changed by an aluminum oxynitride glass, the thicknesscould be reduced to 0.183 mm under touch in same compression strength,and the finger's touching capacitance C_(F) becomes 7.81 times.

Regarding the sensor device module, the sensor device module has atleast two sensor devices. In the view point of tolerance of crosstalknoise of sensor to sensor between any two sensor devices, the lowerthickness is better for reducing the transmitting distance, the higherdielectric constant of cover lens, the longer distance between sensordevices, and the lower current of driving circuit are better forpreventing the interaction from the electromagnetic affect.

Moreover, the sensor device module at least includes a first electrodelayer of y-axis circuit net, an insulated layer and a second electrodelayer of an x-axis circuit net in some embodiments, wherein the firstelectrode layer is a sensing circuit, and the second electrode layer isa driving circuit. It is only one implement type, the function of x-axisand y-axis circuit nets can be exchanged. In the other embodiments,sensor device module is combined with the liquid crystal module anddisposed in the liquid crystal module to form an in-cell type. Theimplement types are selected to satisfy the real application.

During the processes of the manufacturing method of the touch sensormechanism, preparing a touch display device having the sensor devicemodule firstly, and covering a cover lens of the touch sensor mechanismon the top of the touch display device after finishing the processes formanufacturing the touch display device

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention can be understood in more detail by reading thesubsequent detailed description in conjunction with the examples andreferences made to the accompanying drawings, wherein:

FIG. 1 is a schematic drawing for illustrating the structure andoperation of the touch sensor mechanism of the present invention;

FIG. 2 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 1;

FIG. 3 is a schematic drawing illustrating the structure and operationof an embodiment of the touch sensor mechanism of the present invention;

FIG. 4 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 3;

FIG. 5 is a flow chart illustrating the detail steps of preparing atouch display module having the sensor device module of themanufacturing method the touch sensor mechanism shown in FIG. 4;

FIG. 6 is a flow chart illustrating the detail steps of covering a coverlens on the touch display module in the manufacturing method for thetouch sensor mechanism shown in FIG. 4;

FIG. 7 is a schematic drawing illustrating the structure and operationof another embodiment of the touch sensor mechanism of the presentinvention;

FIG. 8 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 7;

FIG. 9 is a flow chart illustrating the detail steps of preparing atouch display module having the sensor device module in themanufacturing method for the touch sensor mechanism shown in FIG. 8;

FIG. 10 is a flow chart illustrating the detail steps of covering acover lens on the touch display module in the manufacturing method ofthe touch sensor mechanism shown in FIG. 8;

FIG. 11 is a schematic drawing illustrating the structure and operationof yet another embodiment of the touch sensor mechanism of the presentinvention;

FIG. 12 is a flow chart illustrating the steps of the manufacturingmethod of the touch sensor mechanism as the embodiment shown in of FIG.11;

FIG. 13 is a flow chart illustrating the detail steps of forming sensordevice module of the manufacturing method in the touch sensor mechanismshown in FIG. 12;

FIG. 14 is a flow chart illustrating the detail steps of forming thesensor device module of the manufacturing method the touch sensormechanism shown in FIG. 12;

FIG. 15 is a schematic drawing illustrating the structure and operationof yet another embodiment of touch sensor mechanism of the presentinvention;

FIG. 16 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 15;

FIG. 17 is a flow chart illustrating the detail steps of forming asensor device module of the manufacturing method of touch sensormechanism shown in FIG. 16;

FIG. 18 is a flow chart illustrating the detail steps of performing theassembly operation to manufacture the touch display device of themanufacturing method the touch sensor mechanism.

FIG. 19 is a schematic drawing for illustrating the structure andoperation of further another embodiment of touch sensor mechanism of thepresent invention;

FIG. 20 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 19;

FIG. 21 is a flow chart illustrating the detail steps of forming asensor device module of the manufacturing method of touch sensormechanism shown in FIG. 20; and

FIG. 22 is a flow chart illustrating the detail steps of performing theassembly operation to manufacture the touch display device of themanufacturing method the touch sensor mechanism shown in FIG. 20.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

FIG. 1 is a schematic drawing for illustrating the structure andoperation of the touch sensor mechanism of the present invention. Asshown in FIG. 1, the touch sensor mechanism 1 of the present inventionincludes a cover lens 2 and a sensor device module 3. Herein, the touchsensor mechanism 1 can be applied in a touch display device, such as anout-cell LCD touch display device, in-cell LCD touch display device,on-cell LCD touch display device, in-cell/on-cell hybrid LCD touchdisplay device, out-cell OLED touch display device, on-cell OLED touchdisplay device, and in-cell OLED touch display device depending on thereal application request.

Regarding the cover lens 2, the cover lens 2 is a transparent materialwith a reduced thickness, a high dielectric constant (>4.5) and a highmechanic strength (>700 MPa) for touch. The finger's touchingcapacitance (C_(F)) can be greatly improved by reducing the thicknessand increasing dielectric constant, and ratio (C_(F)/C_(P)) of thefinger's touching capacitance (C_(F)) to the sensor parasiticcapacitance of sensor device (C_(P)) of the sensor device module 3 isalso greatly improved. Therefore, the signal-to-noise ratio (SNR) can beadjusted to a suitable value to prevent the sensitivity from too high ortoo low. The tolerance of crosstalk noise between sensors of the sensordevice module 3 can be improved, and serious electromagnetic interactiondue to the large-sized touch display device can be eliminated, and/or itprovides more tolerance in circuit design.

Herein, sapphire (Al₂O₃) in varied axis (such as a-axis, c-axis, m-axis,and r-axis) is selected as the material of cover lens. The compressionstrength in each axis of sapphire is higher than 2000 MPa, and thedielectric constant (∈_(r)) is 11.5 in a-axis, 9.3 in c-axis and 11.5 inm-axis. Since sapphire in varied axis can be applied and sapphire can bea single crystal in one of a-axis, c-axis, m-axis, and r-axis. Analuminum oxynitride glass (Al_((64+x)/3)O_((32−x))N_(x), 2.75≦x≦5) canalso be selected as the material of cover lens, the aluminum oxynitrideglass has a compression strength higher than 2677 MPa and the dielectricconstant (∈_(r)) 9.19. The material is selected according to the realcondition.

Reducing the thickness of cover lens and increasing the dielectricconstant of cover lens, such that the finger's touching capacitance(C_(F)) can be greatly increased, and the signal-to-noise ratio (SNR)can be also improved. Take well-known out-cell touch device which has acover lens with a thickness of 0.7 mm and a dielectric constant 4.5 asan example, if the cover lens is changed by a c-axis sapphire glass, thethickness could be reduced to 0.245 mm under touch in same compressionstrength, and the finger's touching capacitance C_(F) becomes 5.9 times,and if the cover lens is changed by a a-axis or m-axis sapphire glass,the thickness could be reduced to 0.245 mm under touch in samecompression strength, and the finger's touching capacitance C_(F)becomes 7.3 times, moreover, if the cover lens is changed by an aluminumoxynitride glass, the thickness could be reduced to 0.183 mm under touchin same compression strength, and the finger's touching capacitanceC_(F) becomes 7.81 times.

Regarding the sensor device module 3, the sensor device module 3 has atleast two sensor devices. In the view point of tolerance of crosstalknoise between any two sensor devices, it is hoped to have lowerthickness of the cover lens 2 to reduce the capacitance transmittingdistance, and higher dielectric constant of the cover lens 2, largerdistance between sensor devices, and lower current for driving circuitto reduce the interaction of electromagnetic effect.

Moreover, the sensor device module 3 at least includes a first electrodelayer of y-axis circuit net, an insulated layer and a second electrodelayer of an x-axis circuit net in some embodiments, wherein the firstelectrode layer, the insulated layer and the second electrode layerconsist of a sensor device. In the other embodiments, sensor devicemodule 3 is combined with the liquid crystal module and disposed in theliquid crystal module to form an in-cell type. The implement types areselected to satisfy the real application.

FIG. 2 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 1.As shown in FIG. 2, firstly, forming a sensor device module 3 in step11, herein the steps 11 can be preparing a touch display device havingthe sensor device module 3 of the touch sensor mechanism 1 or formingthe sensor device module 3 on the cover lens 2. The implement types areselected to satisfy the real application. Then, entering the step 12.

In the step 12, performing the assembly operation to manufacture thetouch display device having touch function, wherein the step 12 can becovering the cover lens 2 of the touch sensor mechanism 1 on the top oftouch display module to form a touch display device having the coverlens and having touch function after finishing the processes of thetouch display module in sequence, or combining a structure having thecover lens 2 and the sensor device module 3 with the touch displaymodule to form a touch display device having touch function. Theimplement types are selected to satisfy the real application.

FIG. 3 is a schematic drawing illustrating the structure and operationof an embodiment of the touch sensor mechanism of the present invention.As shown in FIG. 3, the touch sensor mechanism 1 of the presentinvention includes a cover lens 2 and a sensor device module 3. Herein,the touch sensor mechanism 1 can be applied in an out-cell LCD touchdisplay device 4, wherein the out-cell LCD touch display device 4includes the cover lens 2, a decoration 102, the sensor device module 3,a top polarizer 106, a color filter glass 107, a color filter module108, a liquid crystal module 109, a thin film transistor (TFT) 110, anda thin film transistor array glass 111. The total thickness d of thecover lens 2, the decoration 102, and the sensor device module 3 is 0.7mm. The top polarizer 106, the color filter glass 107, the color filtermodule 108, the liquid crystal module 109, the thin film transistor(TFT) 110, and the thin film transistor array glass 111 consist of thetouch display module 401, and the cover lens 2, the decoration 102, andthe sensor device module 3 consist of a structure 30.

Regarding the cover lens 2, the cover lens 2 is a transparent materialwith a reduced thickness, a high dielectric constant (>4.5) and a highmechanic strength (>700 MPa) for touch. The finger's touchingcapacitance (C_(F)) can be greatly improved by reducing the thicknessand increasing dielectric constant, and ratio (C_(F)/C_(P)) of thefinger's touching capacitance (C_(F)) to the sensor parasiticcapacitance of sensor device (C_(P)) of the sensor device module 3 isalso greatly improved. Therefore, the signal-to-noise ratio (SNR) can beadjusted to a suitable value to prevent the sensitivity too high or toolow. Since the increasing of the finger's touching capacitance (C_(F)),the tolerance of crosstalk noise between sensors of the sensor devicemodule 3 can be improved, and serious electromagnetic interaction due tothe large-sized touch display device 4 can be eliminated, and/or itprovides more tolerance in capacitance device design.

According to the prior art, the compression strength of generalreinforced glass is 700 MPa, the dielectric constant ∈_(r) of thegeneral reinforced glass is 4.5, and the thickness of the generalreinforced glass is 0.7 mm. The signal-to-noise ratio (SNR) is(μ_(U)−μ_(P))/σ_(U), wherein (μ_(U)−μ_(P)) is 135, σ_(U) is 27, so thesignal-to-noise ratio (SNR)=(135/27)=5. However, sapphire (Al₂O₃) invaried axis (such as a-axis, c-axis, m-axis, and r-axis) can be selectedas the material of the cover lens 2 in this embodiment. Herein, forexample, the material of cover lens 2 is sapphire in c-axis, thecompression strength ≧2000 MPa, and the dielectric constant ∈_(r) is9.3, under a condition of the same compression strength requirement withChemically Strengthened Glass, the thickness can reduce to 0.35d (0.245mm). The signal-to-noise ratio (SNR) is (μ_(U)−μ_(P))/σ_(U), wherein(μ_(U)−μ_(P))=135×(11.5/4.5)×((0.7/0.245)=797 and σ_(U)=27, such thatthe signal-to-noise ratio (SNR) is (797/27)=29.5, which is greatly thansignal-to-noise ratio in prior art (SNR=5). For another example, thematerial of cover lens 2 is sapphire in a-axis, the compression strength≧2000 MPa, and the dielectric constant ∈_(r) is 11.5, under a conditionof the same compression strength requirement with ChemicallyStrengthened Glass, the thickness can reduce to 0.35d. Thesignal-to-noise ratio (SNR) is (μ_(U)−μ_(P))/σ_(U), wherein(μ_(U)−μ_(P))=985.7, and σ_(U)=27, such that the signal-to-noise ratio(SNR) is (985.7/27)=36.5, which is greatly than signal-to-noise ratio inprior art (SNR=5).

Since sapphire in varied axis can be applied, and sapphire can be asingle crystal in one of a-axis, c-axis, m-axis, and r-axis, wherein thecrystal direction in c-axis is (0001); crystal direction in a-axisincludes (1 210), (11 20), (2 1 10), ( 1120), ( 2110) and ( 1210);crystal direction in m-axis includes ( 1010), ( 1100), (01 10), (10 10),(1 100), and (0 110); and crystal direction in r-axis includes (10 11),( 101 1), (01 1 1), (0 111), (1 10 1) and ( 1101).

In addition, the material of cover lens can be a aluminum oxynitrideglass (Al_((64+x)/3)O_((32−x))N_(x), 2.75≦x≦5) with compression strengthhigher than 2677 MPa and the dielectric constant (∈_(r)) 9.19, under acondition of the same compression strength requirement with ChemicallyStrengthened Glass, the thickness can reduce to 0.262 d (0.183 mm). Inthe other words, the signal-to-noise ratio (SNR) is (μ_(U)−μ_(P))/σ_(U),wherein (μ_(U)−μ_(P))=1052.3, and σ_(U)=27, such that thesignal-to-noise ratio (SNR) is (1052.3/27)=39, which is greatly thansignal-to-noise ratio in prior art (SNR=5).

Regarding the sensor device module 3, the sensor device module 3 atleast includes a first sensor layer 31 of y-axis sensor circuit net 301,an insulated layer 32 and a second sensor layer 33 of an x-axis sensorcircuit net 302, such that the sensor device module 3 includes at leasttwo sensor device. In the view point of tolerance of crosstalk noisebetween any two sensor devices, it is hoped to have lower thickness ofthe cover lens 2, higher dielectric constant of the cover lens 2, largerdistance between sensor devices, and lower current for driving circuit.

Herein, even though the touch sensor mechanism 1 of this embodiment isapplied in the out-cell LCD touch display device 4, however, theoperation principle of the out-cell LCD touch display device andout-cell OLED touch display device is the same. So the device appliedsimilar principle will be omitted.

FIG. 4 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 3.As shown in FIG. 4, firstly, forming a sensor device module 3 in step21, herein the step 21 is forming the sensor device module 3 on thecover lens 2. Then, entering the step 12.

In the step 12, performing the assembly operation to manufacture thetouch display device having touch function, wherein the step 12 iscombining a structure having the cover lens 2 and the sensor devicemodule 3 with the touch display module 401 to form a touch displaydevice having touch function.

FIG. 5 is a flow chart illustrating the detail steps of preparing atouch display module having the sensor device module of themanufacturing method the touch sensor mechanism shown in FIG. 4. Asshown in FIG. 5, manufacturing a decoration 102 on the cover lens 2 instep 211, and then entering the step 212.

In step 212, disposing the touch sensor module 3 on the decoration 102.

FIG. 6 is a flow chart illustrating the detail steps of covering a coverlens on the touch display module in the manufacturing method for thetouch sensor mechanism shown in FIG. 4. As shown in FIG. 6, performingLCD display module processes in step 221 to form a touch display module401 having a top polarizer 106, a color filter glass 107, a color filtermodule 108, a liquid crystal module 109, a thin film transistor 110, anda thin film transistor array glass 111, and then entering the step 222.

In step 222, attaching a structure 30 having the cover lens 2, thedecoration 102 and the touch sensor module 3 to the touch display module401.

FIG. 7 is a schematic drawing illustrating the structure and operationof another embodiment of the touch sensor mechanism of the presentinvention. As shown in FIG. 7, the touch sensor mechanism 1 of thepresent invention includes a cover lens 2 and a sensor device module 3.Herein, the touch sensor mechanism 1 can be applied in an on-cell LCDtouch display device 5, wherein the on-cell LCD touch display device 5includes the cover lens 2, a decoration 502, a top polarizer 503, thesensor device module 3, a color filter glass 507, a color filter module508, a liquid crystal module 509, a thin film transistor 510, and a thinfilm transistor array glass 511, wherein the top polarizer 503, thesensor device module 3, the color filter glass 507, the color filtermodule 508, the liquid crystal module 509, the thin film transistor 510,and the thin film transistor array glass 511 consist of the touchdisplay module 50.

Regarding the cover lens 2, the cover lens 2 is a transparent materialwith a reduced thickness, a high dielectric constant (>4.5) and a highmechanic strength (>700 MPa) for touch. The finger's touchingcapacitance (C_(F)) can be greatly improved by reducing the thicknessand increasing dielectric constant, and ratio (C_(F)/C_(P)) of thefinger's touching capacitance (C_(F)) to the sensor parasiticcapacitance of sensor device (C_(P)) of the sensor device module 3 isalso greatly improved. Therefore, the signal-to-noise ratio (SNR) can beadjusted to a suitable value to prevent the sensitivity too high or toolow. Since the increasing of the finger's touching capacitance (C_(F)),the tolerance of crosstalk noise between sensors of the sensor devicemodule 3 can be improved, and serious electromagnetic interaction due tothe large-sized touch display device 5 can be eliminated, and/or itprovides more tolerance in capacitance device design.

Herein, since the sensors of the sensor device module 3 is the same asthe description of sensors in the out-cell LCD touch display deviceshown in FIG. 3, and the distance between the user's finger and thesensors is the thickness of the cover lens 2, so that the influence tothe signal-to-noise ratio (SNR) is the same.

In the other words, sapphire (Al₂O₃) in varied axis (such as a-axis,c-axis, m-axis, and r-axis) can be selected as the material of the coverlens 2 in this embodiment. Herein, for example, the material of coverlens 2 is sapphire in c-axis, the compression strength ≧2000 MPa, andthe dielectric constant ∈_(r) is 9.3, under a condition of the samecompression strength requirement with Chemically Strengthened Glass, thethickness can reduce to 0.35d. The signal-to-noise ratio (SNR) is(μ_(U)−μ_(P))/σ_(U), wherein(μ_(U)−μ_(P))=135×(11.5/4.5)×(0.7/0.245)=797 and σ_(U)=27, such that thesignal-to-noise ratio (SNR) is (797/27)=29.5, which is greatly thansignal-to-noise ratio in prior art (SNR=5). For another example, thematerial of cover lens 2 is sapphire in a-axis, the compression strength≧2000 MPa, and the dielectric constant ∈_(r) is 11.5, under a conditionof the same compression strength requirement with ChemicallyStrengthened Glass, the thickness can reduce to 0.35d. Thesignal-to-noise ratio (SNR) is (μ_(U)−μ_(P))/σ_(U), wherein(μ_(U)−μ_(P))=985.7, and σ_(U)=27, such that the signal-to-noise ratio(SNR) is (985.7/27)=36.5, which is greatly than signal-to-noise ratio inprior art (SNR=5).

Moreover, the material of cover lens can be a aluminum oxynitride glass(Al_((64+x)/3)O_((32−x))N×, 2.75≦x≦5) with compression strength higherthan 2677 MPa and the dielectric constant (∈_(r)) 9.19, under acondition of the same compression strength requirement with ChemicallyStrengthened Glass, the thickness can reduce to 0.262 d (0.183 mm). Inthe other words, the signal-to-noise ratio (SNR) is (μ_(U)−μ_(P))σ_(U),wherein (μ_(U)−μ_(P))=1052.3, and σ_(U)=27, such that thesignal-to-noise ratio (SNR) is (1052.3/27)=39, which is greatly thansignal-to-noise ratio in prior art (SNR=5).

Regarding the sensor device module 3, the sensor device module 3 atleast includes a first sensor layer 31 of y-axis sensor circuit net 301,an insulated layer 32 and a second sensor layer 33 of an x-axis sensorcircuit net 302, such that the sensor device module 3 includes at leasttwo sensor device. In the view point of tolerance of crosstalk noisebetween any two sensor devices, it is hoped to have lower thickness ofthe cover lens 2, higher dielectric constant of the cover lens 2, largerdistance between sensor devices, and lower current for driving circuit.

Herein, even though the touch sensor mechanism 1 of this embodiment isapplied in the on-cell LCD touch display device 5, however, theoperation principle of the on-cell LCD touch display device and on-cellOLED touch display device is the same. So the device applied similarprinciple will be omitted.

FIG. 8 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 7.As shown in FIG. 8, firstly, forming a sensor device module 3 in step41, herein the step 41 is preparing a touch display device 50 having thesensor device module 3 of the touch sensor mechanism 1, and then,entering the step 42.

In the step 42, performing the assembly operation to manufacture thetouch display device having touch function, wherein the step 42 iscovering the cover lens 2 of the touch sensor mechanism 1 on the top oftouch display module to form a touch display device 5 having the coverlens and having touch function after finishing the processes of thetouch display module in sequence.

FIG. 9 is a flow chart illustrating the detail steps of preparing atouch display module having the sensor device module in themanufacturing method for the touch sensor mechanism shown in FIG. 8. Asshown in FIG. 9, first disposing the sensor device module 3 on the colorfilter glass in step 411, and then entering the step 412.

In step 412, performing LCD display device processes of the touchdisplay device 5 to make the touch display device 5 have touch displayfunction.

FIG. 10 is a flow chart illustrating the detail steps of covering acover lens on the touch display module in the manufacturing method ofthe touch sensor mechanism shown in FIG. 8. As shown in FIG. 10,firstly, manufacturing a decoration 502 on the cover lens 2 in step 421,and then entering the step 422.

In step 422, attaching the cover lens 2 to the touch display module 50having the touch sensor module 3.

FIG. 11 is a schematic drawing illustrating the structure and operationof yet another embodiment of the touch sensor mechanism of the presentinvention. As shown in FIG. 11, the touch sensor mechanism 1 of thepresent invention includes a cover lens 2 and a sensor device module 3.Herein, the touch sensor mechanism 1 can be applied in an on-cell Punder OLED touch display device 9, wherein the on-cell P under OLEDtouch display device 9 includes the cover lens 2, a decoration 902, thesensor device module 3, a polarizer 903, an OLED module 909, an OLEDswitching thin film transistor 910, and a thin film transistor arrayglass 911, wherein a structure 34 is consisting of at least the coverlens 2, the decoration 902, and the sensor device module 3.

Regarding the cover lens 2, the cover lens 2 is a transparent materialwith high higher dielectric constant (>4.5) and high mechanic strength(>700 MPa) selected for touch. The finger's touching capacitance (C_(F))is greatly improved by reducing the thickness and increasing thedielectric constant, such that ratio of the finger's touchingcapacitance (C_(F)) to the sensor parasitic capacitance of the sensor(C_(P)) (not visible) in the sensor device module 3, that is(C_(F)/C_(P)), is also improved. The signal-to-noise ratio (SNR) relatedto the ratio (C_(F)/C_(P)) can be adjusted to a suitable value toprevent the sensitivity too high or too low. The tolerance of crosstalknoise between sensor to sensor of the sensor device module 3 is improveddue to the improvement of finger's touching capacitance (C_(F)), suchthat the electromagnetic affect due to the large-sized of touch panel oftouch display device 9 is also eliminated, and/or it provides moretolerance in circuit design.

Herein, since the sensors of the sensor device module 3 is the same asthe description of sensors in the out-cell LCD touch display deviceshown in FIG. 3, and the distance between the finger and the sensors isthe thickness of the cover lens 2, so that the influence to thesignal-to-noise ratio (SNR) is the same.

In this embodiment, even though the touch display device is an on-cellP-under OLED, however, the operation principle of on-cell P-under OLEDand on-cell P-cap OLED is the same. So the device applied similarprinciple will be omitted.

FIG. 12 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 11.

In the step 92, performing the assembly operation to manufacture thetouch display device 9 having touch function, wherein the step 92 atleast includes combining the cover lens 2 and the structure 34 of thesensor device module 3 with the OLED module 909 to manufacture the touchdisplay device 9 having the touch function.

FIG. 13 is a flow chart illustrating the detail steps of forming thesensor device module of the manufacturing method the touch sensormechanism shown in FIG. 12. As shown in FIG. 13, firstly perform aprocess for forming a decoration 902 in step 921, then entering the step922.

In step 922, disposing the sensor device module 3 on the decoration 902,and attaching a polarizer 903 thereon.

FIG. 14 is a flow chart illustrating the detail steps of performing theassembly operation to manufacture the touch display device of themanufacturing method of the touch sensor mechanism shown in FIG. 12. Asshown in FIG. 14, manufacturing OLED device in the step 931 firstly,then entering step 932.

In step 932, assembling and packaging the OLED device and the cover lens2 of the sensor device module 3 together.

FIG. 15 is a schematic drawing for illustrating the structure andoperation of yet another embodiment of touch sensor mechanism of thepresent invention. As shown in FIG. 15, the touch sensor mechanism 1 ofthe present invention includes a cover lens 2 and a sensor device module3, wherein the touch sensor mechanism 1 is applied in an in-cell LCDtouch display device 6. The in-cell LCD touch display device 6 includesthe cover lens 2, a decoration 602, a top polarizer 603, the sensordevice module 3, a color filter glass 604, a color filter 605, a liquidcrystal module 606, a liquid switch thin film transistor 607, acapacitance sensing thin film transistor 608, and a thin film transistorglass 609, wherein the sensor device module 3 is disposed in thecapacitance sensing thin film transistor 608 to form the in-cell type,and a touch display module 60 consists of the color filter glass 604,the color filter 605, the liquid crystal module 606, the liquid switchthin film transistor 607, the capacitance sensing thin film transistor608, and the thin film transistor glass 609.

Regarding the cover lens 2, the cover lens 2 is a transparent materialwith a reduced thickness, a high dielectric constant (>4.5) and a highmechanic strength (>700 MPa) for touch. The finger's touchingcapacitance (C_(F)) can be greatly improved by reducing the thicknessand increasing dielectric constant, and ratio (C_(F)/C_(P)) of thefinger's touching capacitance (C_(F)) to the sensor parasiticcapacitance of sensor device (C_(P)) of the sensor device module 3 isalso greatly improved. Therefore, the signal-to-noise ratio (SNR) can beadjusted to a suitable value to prevent the sensitivity too high or toolow. Since the increasing of the finger's touching capacitance (C_(F)),the tolerance of crosstalk noise between sensors of the sensor devicemodule 3 to the thin film transistor (TFT) driver of liquid crystaldisplay module 60 can be improved, and serious electromagneticinteraction due to the large-sized touch display device can beeliminated, and/or it provides more tolerance in circuit design.

According to the prior art, the compression strength of generalreinforced glass is 700 MPa, the dielectric constant ∈_(r) of thegeneral reinforced glass is 4.5, and the thickness of the generalreinforced glass is 0.7 mm. The signal-to-noise ratio (SNR) is(μ_(U)−μ_(P))/σ_(U), wherein (μ_(U)-μp) is 135, σ_(U) is 27, so thesignal-to-noise ratio (SNR)=(135/27)=5. However, sapphire (Al₂O₃) invaried axis (such as a-axis, c-axis, m-axis, and r-axis) can be selectedas the material of the cover lens 2 in this embodiment.

Herein, for example, the material of cover lens 2 is sapphire in a-axis,the compression strength ≧2000 MPa, and the dielectric constant ∈_(r) is11.5, under a condition of the same compression strength requirementwith Chemically Strengthened Glass, the thickness can reduce to 0.245mm. The signal-to-noise ratio (SNR) is (μ_(U)−μ_(P))/σ_(U), wherein(μ_(U)−μ_(P))=(135×7/12)+(135×5/12×(11.5/4.5)×(0.7/0.245))=489.46, andσ_(U)=27, such that the signal-to-noise ratio (SNR) is(489.46/27)=18.13. The signal-to-noise ratio (SNR) is raised to 3.626times (18.13/5=3.626) comparing with the signal-to-noise ratio of theprior art (SNR=5). If the thickness of the cover lens 2 is 0.3 under asame process yield condition, the(μ_(U)−μ_(P))=(135×7/12)+(135×5/12×(11.5/4.5)×(0.7/0.3))=414.15, andσ_(U)=27, so that the signal-to-noise ratio (SNR) is(μ_(U)−μ_(P))/σ_(U)=(414.15/27)=15.34. The signal-to-noise ratio (SNR)is raised to 3.068 times (15.34/5=3.068) comparing with thesignal-to-noise ratio of the prior art (SNR=5). If the thickness of thecover lens 2 is 0.4 mm under a same process yield condition, the(μ_(U)−μ_(P))=(135×7/12)+(135×5/12×(11.5/4.5)×(0.7/0.4))=330.31, andσ_(U)=27, so that the signal-to-noise ratio (SNR) is(μ_(U)−μ_(P))/σ_(U)=(330.31/27)=12.23. The signal-to-noise ratio (SNR)is raised to 2.446 times comparing with the signal-to-noise ratio of theprior art (SNR=5). Therefore, it is obvious that the tolerance of thesignal-to-noise is increased while reducing the thickness of the coverlens.

For another example, if the material of cover lens 2 is sapphire inc-axis, which has the compression strength ≧2000 MPa, and the dielectricconstant ∈_(r) is 9.3, and a thickness 0.35d (0.245 mm), the(μ_(U)−μ_(P))=(135×7/12)+(135×5/12×(9.3/4.5)/(0.7/0.245))=410.89, andσ_(U)=27, such that the signal-to-noise ratio (SNR) is(μ_(U)−μ_(P))/σ_(U)=(410.89/27)=15.22. The signal-to-noise ratio (SNR)is raised to 3.044 (15.22/5=3.044) times comparing with thesignal-to-noise ratio of the prior art (SNR=5).

For yet another example, if the cover lens 2 use aluminum oxynitrideglass (Al_((64+x)/3)O_((32−x))N_(x), 2.75≦x≦5), which has thecompression strength ≧2677 MPa, and the dielectric constant ∈_(r) is9.19, and a thickness 0.262d (0.1.83 mm), the(μ_(U)−μ_(P))=(135×7/12)+(135×5/12×(9.3/4.5)/(0.7/0.183))=518.16, andσ_(U)=27, such that the signal-to-noise ratio (SNR) is(μ_(U)−μ_(P))/σ_(U)=(518.16/27)=19.19. The signal-to-noise ratio (SNR)is raised to 3.838 times comparing with the signal-to-noise ratio ofprior art (SNR=5).

Regarding the sensor device module 3, the sensor device module 3 has atleast two sensor devices. In the view point of tolerance of crosstalknoise between any two sensor devices, it is hoped to have lowerthickness of the cover lens 2, higher dielectric constant of the coverlens 2, larger distance between sensor devices, and lower current fordriving circuit.

In this embodiment, the sensor device module 3 is disposed in thecapacitance sensing thin film transistor 608 to form the in-cell type.

In this embodiment, even though the touch display device is an in-cellLCD, however, the operation principle of in-cell LCD and in-cell colorconversion OLED is the same. So the device applied similar principlewill be omitted.

FIG. 16 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 15.As shown in FIG. 16, in step 51, forming a sensor device module 3firstly, herein, a touch display module 60 is prepared to have thesensor device module 3 of a touch sensor mechanism 1; then entering thestep 52.

In the step 52, performing the assembly operation to manufacture thetouch display device 6 having touch function, wherein covering a coverlens 2 of the touch sensor mechanism 1 on the top of the touch displaydevice 6 having the touch function after finishing the processes formanufacturing the touch display device 60, so that the touch displaydevice 6 is covered by the cover lens 2 and has the touch function.

FIG. 17 is a flow chart illustrating the detail steps of forming asensor device module of the manufacturing method of touch sensormechanism shown in FIG. 16. As shown in FIG. 17, in step 512, firstlyforming the capacitance sensing thin film transistor 608 having thesensor device module 3 and the liquid switch thin film transistor 607 onthe thin film transistor glass 609, then enter into the step 513.

In the step 513, performing the sequence processes of LCD display devicein order to form the LCD display device having the touch function.

FIG. 18 is a flow chart illustrating the detail steps of performing theassembly operation to manufacture the touch display device of themanufacturing method of the touch sensor mechanism shown in FIG. 16. Asshown in FIG. 18, in step 521, firstly performing a process for forminga decoration 602, then enter into the step 522.

In step 522, attaching the decoration 602 with the touch display module60 having sensor device module 3. FIG. 19 is a schematic drawing forillustrating the structure and operation of another embodiment of touchsensor mechanism of the present invention. As shown in FIG. 19, thetouch sensor mechanism 1 of the present invention includes a cover lens2 and a sensor device module 3, wherein the touch sensor mechanism 1 isapplied in an in-cell OLED touch display device 7. The in-cell OLEDtouch display device 7 includes the cover lens 2, a decoration 702, atop polarizer 703, an OLED module 704, an OLED switch thin filmtransistor 705, the sensor device module 3, a capacitance sensing thinfilm transistor 706, and a glass substrate 707, wherein the sensordevice module 3 is disposed in the capacitance sensing thin filmtransistor 706 to form the in-cell type.

Regarding the cover lens 2, the cover lens 2 is selected as atransparent material with a reduced thickness, a high dielectricconstant (>4.5) and a high mechanic strength (>700 MPa) for touch. Thefinger's touching capacitance (C_(F)) is greatly improved by reducingthe thickness and increasing dielectric constant, and ratio(C_(F)/C_(P)) of the finger's touching capacitance (C_(F)) to the sensorparasitic capacitance of sensor (C_(P)) of the sensor (not visible) ofthe sensor device module 3 is also greatly improved. Therefore, thesignal-to-noise ratio (SNR) can be adjusted to a suitable value toprevent the sensitivity from too high or too low. Since the increasingof the finger's touching capacitance (C_(F)), the tolerance of crosstalknoise between sensors of the sensor device module 3 and switch TFTdevice of OLED display module can be improved, and seriouselectromagnetic interaction due to the large-sized touch panel of touchdisplay device 6 can be eliminated and/or it provides more tolerance incircuit design.

In this embodiment, the sensor device module 3 is disposed in thecapacitance sensing thin film transistor 706 to form the in-cell type.

FIG. 20 is a flow chart illustrating the steps of the manufacturingmethod of touch sensor mechanism as the embodiment shown in of FIG. 19.As shown in FIG. 20, in step 400, forming a sensor device module 3firstly, herein, a touch display module 60 is prepared to have thesensor device module 3 of a touch sensor mechanism 1; then enter intothe step 500.

In the step 500, performing the assembly operation to manufacture thetouch display device 6 having touch function, wherein a cover lens 2 ofthe touch sensor mechanism 1 is disposed on and cover the top of thetouch display device 7 having the touch function after finishing theprocesses for manufacturing the touch display device, so that the touchdisplay device 7 is covered by the cover lens 2 and has the touchfunction.

FIG. 21 is a flow chart illustrating the detail steps of forming asensor device module of the manufacturing method of touch sensormechanism shown in FIG. 20. As shown in FIG. 21, in step 4001, firstlyperforming the capacitance sensing thin film transistor 706 having thesensor device module 3 and the OLED switch thin film transistor 705 onthe glass substrate 707, then enter into the step 4002.

In step 4002, performing the sequence processes of OLED display device 7to form the OLED display device having the touch function.

FIG. 22 is a flow chart illustrating the detail steps of performing theassembly operation to manufacture the touch display device of themanufacturing method of the touch sensor mechanism shown in FIG. 20. Asshown in FIG. 22, in step 5001, firstly performing a process for forminga decoration 702 and disposing a polarizer on a surface of thedecoration 702, then enter into the step 5002.

In step 5002, attaching the decoration 602 with the touch display module70 having sensor device module 3.

According to the embodiments described above, the advantages of usingthe sapphire and the aluminum oxynitrid glass with high compressionstrength and high dielectric constant are: 1. the thickness of the coverlens can be greatly reduced under the same compression strength; 2. forthe out-cell type design, the signal-to-noise ratio SNR is raised toseveral times due to the synergy effect of the reduced thickness andhigh dielectric constant, and it provides more tolerance for designingthe capacitance sensing device design; 3. for the on-cell type design,the signal-to-noise ratio SNR is raised to several times due to thesynergy effect of the reduced thickness and high dielectric constant,and it provides more tolerance for designing the capacitance sensingdevice design; 4. for the in-cell type design, if it is used for LCD,the signal-to-noise ratio SNR is not raised as high as the out-cell typeand the on-cell type due to the gap of color filter glass, and if it isused for OLED, the raising effect of signal-to-noise ratio SNR is ashigh as the out-cell type and the on-cell type due to color filter glassis not necessary in the OLED device; 5. the sensing area can be reduced,the distance between sensors can be increased and the level of noise canbe reduced due to the synergy effect of the reduced thickness and highdielectric constant under the same signal to noise SNR.

According to the embodiments described above, a touch sensor mechanismand the manufacturing method thereof applied in a touch display devicecan be obtained. A transparent material with high dielectric constant(>4.5) and high mechanic strength (>700 MPa) is selected to serve as thecover lens for touch, such that the thickness is reduced, the dielectricconstant is increased, and finger's touching capacitance (C_(F)) isimproved. Moreover, the ratio (C_(F)/C_(P)) of the finger's touchingcapacitance (C_(F)) to the sensor parasitic capacitance of sensor(C_(P)) of the sensor (not visible) of the sensor device module is alsogreatly improved and the signal-to-noise ratio (SNR) related to theratio (C_(F)/C_(P)) can be adjusted to a suitable value to prevent thesensitivity too high or too low. The tolerance of crosstalk noisebetween sensor to sensor can be improved because of the improved of thesignal-to-noise ratio (SNR), such that serious electromagneticinteraction due to the large-sized touch panel of touch display deviceand centralization of touch device can be also eliminated, and/or itprovides more tolerance in circuit design.

Although the present invention has been described with reference to thepreferred embodiments, it will be understood that the invention is notlimited to the details described thereof. Various substitutions andmodifications have been suggested in the foregoing description, andothers will occur to those of ordinary skill in the art. Therefore, allsuch substitutions and modifications are intended to be embraced withinthe scope of the invention as defined in the appended claims.

What is claimed is:
 1. A touch sensor mechanism for a touch displaydevice, comprising: a cover lens made by a transparent material having adielectric constant greater than 4.5 and a compression strength greaterthan 700 MPa for generating a finger's touching capacitance (C_(F))while a user's finger of a user touches thereon; and a sensor devicemodule including a plurality of sensor devices having a sensor parasiticcapacitance (C_(P)); wherein the cover lens and the sensor device moduleare disposed in the touch display device in such a manner that a ratioof a standard deviation value (σ_(U)) of the finger's touchingcapacitance (C_(F)) of the cover lens to the sensor parasiticcapacitance (C_(P)) of the sensor device module is a signal-to-noiseratio (SNR), the signal-to-noise ratio (SNR) is adjusted along with thefinger's touching capacitance (C_(F)) by reducing thickness of the coverlens.
 2. The touch sensor mechanism as claimed in claim 1, wherein thetouch display device is selected from a group consisting of an out-cellLCD touch display device, an in-cell LCD touch display device, on-cellLCD touch display device, in-cell/on-cell hybrid LCD touch displaydevice, out-cell OLED touch display device, on-cell OLED touch displaydevice, and in-cell OLED touch display device.
 3. The touch sensormechanism as claimed in claim 2, wherein the transparent material of thecover lens is a sapphire or an aluminum oxynitrid glass.
 4. The touchsensor mechanism as claimed in claim 2, wherein the sensor device moduleincludes a first electrode layer having a y-axis circuit, an insulatedlayer net and a second electrode layer having an x-axis circuit net andthe first electrode layer is a sensing electrode, and the secondelectrode layer is a driving electrode.
 5. The touch sensor mechanism asclaimed in claim 3, wherein a composition of the aluminum oxynitridglass is Al_((64+x)/3)O_((32−x))N_(x), 2.75≦x≦5.
 6. A manufacturingmethod of a touch sensor mechanism for a touch display device,comprising the steps: forming a sensor device module; and performing anassembly operation.
 7. The manufacturing method as claimed in claim 6,wherein forming the sensor device module is preparing a touch displaydevice having the sensor device module with the touch function; andperforming the assembly operation is covering a cover lens on the top ofthe touch display device after finishing the processes for manufacturingthe touch display device, such that the touch display device has thetouch function.
 8. The manufacturing method as claimed in claim 6,wherein forming the sensor device module is forming the sensor devicemodule on a cover lens, and performing the assembly operation isassembling a structure combing the cover lens and the sensor devices toa touch display device having a touch function.
 9. The manufacturingmethod as claimed in claim 7, wherein the touch display device isselected from a group consisting of an out-cell LCD touch displaydevice, an in-cell LCD touch display device, on-cell LCD touch displaydevice, in-cell/on-cell hybrid LCD touch display device, out-cell OLEDtouch display device, on-cell OLED touch display device, and in-cellOLED touch display device.
 10. The manufacturing method as claimed inclaim 8, wherein the touch display device is an out-cell LCD touchdisplay device.